信息来源： 作者: 审核人: 发布日期: 2020年04月28日 20:06浏览次数:

谢继浩  

电话：1521640796

性别：男  理学博士    

邮箱：xiejihao19@sdjzu.edu.cn

政治面貌：中共党员      

籍贯：山东潍坊  出生年月：1991.04

研究方向

材料磁性、阻变存储器件、传感器等

教育经历

2013.09~2019.06    山东大学  物理学院  凝聚态物理    硕博连读研究生

2009.09~2013.06    山东大学  物理学院  应用物理系    本科

科研成果及项目经历

1. Light control of ferromagnetism in ZnO films on Pt substrate at room temperature,

Jihao Xie, Hongwei Qin, Yanming Hao, Bin Cheng, Weikang Liu, Liang Liu, Shaoqing Ren, Guangjun Zhou, Ziwu Ji, and Jifan Hu, Scientific Reports 7, 45642 (2017).

2. Resistive switching and ferromagnetism modulation in copper oxide film on Nb:SrTiO₃ substrate,

Jihao Xie, Shaoqing Ren, Jianpei Bu, Bin Cheng, Weikang Liu, Liang Liu, Guangjun Zhou, Hongwei Qin, and Jifan Hu, Journal of Magnetism and Magnetic Materials 465, 295-299 (2018).

3. The mechanism of photo-regulated magnetization in copper oxide films on Pt substrate,

Jihao Xie, Bin Cheng, Liang Liu, Weikang Liu, Shaoqing Ren, Tingting Miao, Chengyong Gao, Guangjun Zhou, Hongwei Qin, and Jifan Hu, Solid State Communications 303, 113732 (2019).

4. Light-induced double enhancement of resistive switching and control of ferromagnetism in ZnO film,

Jihao Xie, Bin Cheng, Liang Liu, Shaoqing Ren, Weikang Liu, Guangjun Zhou, Hongwei Qin, and Jifan Hu, Materials Research Express 6, 096428 (2019).

5. Coexistence of electric field controlled ferromagnetism and resistive switching for TiO₂ film at room temperature,

Shaoqing Ren, Hongwei Qin, Jianpei Bu, Gengchang Zhu, Jihao Xie, and Jifan Hu, Applied Physics Letters 107, 062404 (2015).

6. Resistive switching and electrical control of ferromagnetism in a Ag/HfO₂/ Nb:SrTiO₃/Ag resistive random access memory (RRAM) device at room temperature,

Shaoqing Ren, Gengchang Zhu, Jihao Xie, Jianpei Bu, Hongwei Qin, and Jifan Hu, Journal of Physics: Condensed Matter 28, 056001(2016).

主要参与项目：电场对氧化物材料磁性的调控与机制研究（国家自然科学基金面上项目）